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  Datasheet File OCR Text:
 Super323 SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR
ISSUE 2 - JUNE 2000 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * Switch functions in LED displays and Satellite receivers * Negative boost functions in DC-DC converters
ZUMT718
DEVICE TYPE ZUMT718
COMPLEMENT ZUMT618
PARTMARKING T72
RCE(sat) 200m at 1A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb =25C* SYMBOL VCBO VCEO VEBO ICM IC IB Ptot VALUE -20 -20 -5 -3 -1 -200 385 500 -55 to +150 UNIT V V V A A mA mW
Operating and Storage Temperature Range
Tj:Tstg
C
Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
37
ZUMT718
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) -33.5 -80 -130 -180 -970 -850 300 300 200 100 20 490 450 315 160 75 210 11 60 135 MHz pF ns ns 2% MIN. -20 -20 -5 -10 -10 -10 -45 -110 -175 -250 -1100 -1100 TYP. MAX. UNIT V V V nA nA nA mV mV mV mV mV mV CONDITIONS. IC= -100A IC= -10mA* IE= -100A VCB=-15V VEB=-4V VCES=-15V IC= -0.1A, IB= -10mA* IC= -0.25A, IB= -10mA* IC= -0.5A, IB=-20 mA* IC= -1A, IB= -100mA* IC= -1A, IB= -100mA* IC= -1A, VCE= 2V* IC= -10mA, VCE=-2V* IC= -0.1A, VCE= -2V* IC= -0.5A, VCE=-2V* IC= -1A, VCE= -2V* IC= -1.5A, VCE= -2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz VCC= -10V, IC= -1A IB1=IB2=-100mA
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
VBE(sat) VBE(on) hFE
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT Cobo t(on) t(off)
38
*Measured under pulsed conditions. Pulse width=300s. Duty cycle
ZUMT718
TYPICAL CHARACTERISTICS
0.6 0.6
+25C IC/IB=50
VCE(sat) - (V)
VCE(sat) - (V)
0.4
IC/IB=10 IC/IB=50 IC/IB=100
0.4
-55C +25C +100C +150C
0.2
0.2
0
1m
10m
100m
1
10
0
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
VCE=2V
800
1.2
IC/IB=10
hFE - Typical Gain
+100C
+25C
VBE(sat) - (V)
600
0.9
400
0.6
-55C +25C +100C +150C
200
-55C
0.3
0 1m 10m 100m 1 10
0
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
10 1.0 0.8 0.6 0.4 0.2 0 1m 10m 100m 1 10
-55C +25C +100C +150C
IC - Collector Current (A)
VBE(on) - (V)
1
DC 1s 100ms 10ms 1ms 100s
100m
10m 100m
1
10
100
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
39


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